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                FFA60UP30DNTU PDF Datasheet瀏覽和下ξ 載

                型號:
                FFA60UP30DNTU
                PDF下載:
                下載PDF文件 在線瀏覽文檔
                內容描述:
                [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
                文件大小:
                5115 K
                文件頁數:
                2 Pages
                品牌Logo:
                品牌名稱:
                THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



                 瀏覽型號FFA60UP30DNTU的Datasheet PDF文件第2頁 
                FFA60UP30DNTU
                Pb
                Pb Free Plating Product
                FFA60UP30DNTU
                TO-3PB(TO-3PN)
                Cathode(Bottom Side Metal Heatsink)
                60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
                APPLICATION
                ·
                ·
                ·
                ·
                ·
                ·
                ·
                Freewheeling, Snubber, Clamp
                Inversion Welder
                PFC
                Plating Power Supply
                Ultrasonic Cleaner and Welder
                Converter & Chopper
                UPS
                PRODUCT FEATURE
                ·
                Ultrafast Recovery Time
                ·
                Soft Recovery Characteristics
                ·
                Low Recovery Loss
                ·
                Low Forward Voltage
                ·
                High Surge Current Capability
                ·
                Low Leakage Current
                Internal Configuration
                Base Backside
                Anode
                Anode
                Cathode
                GENERAL DESCRIPTION
                FFA60UP30DNTU using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
                Absolute Maximum Ratings
                Parameter
                Repetitive peak reverse voltage
                Continuous forward current
                Single pulse forward current
                Maximum repetitive forward current
                Operating junction
                Storage temperatures
                Symbol
                V
                RRM
                I
                F(AV)
                I
                FSM
                I
                FRM
                Tj
                Tstg
                Test Conditions
                Tc =110°C
                Tc =25°C
                Square wave, 20kHZ
                Values
                300
                60
                600
                150
                175
                -55 to +175
                °C
                °C
                A
                Units
                V
                Electrical characteristics (Ta=25°C unless otherwise specified)
                Parameter
                Breakdown voltage
                Blocking voltage
                Forward voltage
                (Per Diode)
                Reverse leakage
                current(Per Diode)
                Reverse recovery
                time(Per Diode)
                Symbol
                V
                BR
                ,
                V
                R
                V
                F
                Test Conditions
                I
                R
                =100μA
                I
                F
                =30A
                I
                F
                =30A, Tj =125°C
                V
                R
                = V
                RRM
                I
                R
                Tj=150°C, V
                R
                =300V
                I
                F
                =0.5A, I
                R
                =1A, I
                RR
                =0.25A
                I
                F
                =1A,V
                R
                =30V, di/dt =200A/us
                35
                26
                Min
                300
                0.96
                0.85
                1.20
                1.00
                10
                100
                45
                40
                μA
                V
                Typ.
                Max.
                Units
                t
                rr
                ns
                Thermal characteristics
                Junction-to-Case
                Paramter
                Symbol
                R
                θJC
                Typ
                0.8
                ℃/W
                Units
                Rev.08T
                ? 1995 Thinki Semiconductor Co., Ltd.
                Page 1/2
                http://www.thinkisemi.com.tw/